Buried Oxide Formation By Ion Implantation

K. Steeples; M. A. Guerra

doi:10.1117/12.946493

9 April 1985 Buried Oxide Formation By Ion Implantation

K. Steeples, M. A. Guerra

Proceedings Volume 0530, Advanced Applications of Ion Implantation; (1985) https://doi.org/10.1117/12.946493
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States

Abstract

High power oxygen ion beams have been used to produce a buried insulating layer in silicon wafers. Standard materials analysis techniques show that a thermally stable insulating layer is formed beneath the single crystal surface layer of silicon, serving to isolate the surface from the substrate.

Citation Download Citation

K. Steeples and M. A. Guerra "Buried Oxide Formation By Ion Implantation", Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); https://doi.org/10.1117/12.946493

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