MeV Implantation In The III-V's

H. B. Dietrich

doi:10.1117/12.946464

9 April 1985 MeV Implantation In The III-V's

H. B. Dietrich

Proceedings Volume 0530, Advanced Applications of Ion Implantation; (1985) https://doi.org/10.1117/12.946464
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States

Abstract

MeV implantation has a number of potential device and IC applications in both Si and the III-V's. Some of these have already begun to be realized in the Si technology. The development of III-V applications is, however, in a more embryonic stage. The primary thrust in the III-V's is toward increasing the range of devices which can be made by direct ion im-plantation to increase the level of device integration which can be attained. This paper will contrast the III-V technology with the Si, outline some of the potential applications for MeV implantation in the III-V's and discuss the basic research areas in which progress must be made in order to increase the use of MeV implantation in the III-V device and IC technology.

Citation Download Citation

H. B. Dietrich "MeV Implantation In The III-V's", Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); https://doi.org/10.1117/12.946464

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