Silicon-based light emission after ion implantation

Martin Kittler; T. Arguirov; W. Seifert

doi:10.1117/12.553871

1 July 2004 Silicon-based light emission after ion implantation

Martin Kittler, T. Arguirov, W. Seifert

Proceedings Volume 5357, Optoelectronic Integration on Silicon; (2004) https://doi.org/10.1117/12.553871
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

Photoluminescence and electroluminescence of boron and phosphorus implanted silicon have been studied as a function of temperature. Phosphorus implantation is found to have a similar effect on light emission as boron implantation. An increase of the band-to-band luminescence intensity by one order of magnitude is observed upon rising the temperature from 80 K to 300 K. Defect luminescence arising from the implanted layer is found only at low temperatures. The remarkable band-to-band luminescence is attributed to a high Shockley-Read-Hall lifetime caused by the gettering action of implantation defects.

Citation Download Citation

Martin Kittler, T. Arguirov, and W. Seifert "Silicon-based light emission after ion implantation", Proc. SPIE 5357, Optoelectronic Integration on Silicon, (1 July 2004); https://doi.org/10.1117/12.553871

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