High-throughput scribing for the manufacture of LED components

Dimitris Karnakis; Elizabeth K. Illy; Martyn R. H. Knowles; Erdan Gu; Martin D. Dawson

doi:10.1117/12.531685

21 June 2004 High-throughput scribing for the manufacture of LED components

Dimitris Karnakis, Elizabeth K. Illy, Martyn R. H. Knowles, Erdan Gu, Martin D. Dawson

Author Affiliations +

Proceedings Volume 5366, Light-Emitting Diodes: Research, Manufacturing, and Applications VIII; (2004) https://doi.org/10.1117/12.531685
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

Lasers are an important tool in the fabrication of photonic components and in particular their use in scribing for separating LED dies on sapphire substrates. This paper describes scribing and cutting of sapphire and GaN using UV lasers (355nm and 266nm harmonics of Nd:YVO₄ and 255nm harmonic of CVL). Scribing of sapphire at speed of 30mm/s have been achieved and cutting of sapphire of up to 700 microns thickness has been demonstrated.

Citation Download Citation

Dimitris Karnakis, Elizabeth K. Illy, Martyn R. H. Knowles, Erdan Gu, and Martin D. Dawson "High-throughput scribing for the manufacture of LED components", Proc. SPIE 5366, Light-Emitting Diodes: Research, Manufacturing, and Applications VIII, (21 June 2004); https://doi.org/10.1117/12.531685

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