Paper
20 May 2004 LEEPL production tool: EBPrinter LEEPL-3000
Norihiko Samoto, Hideaki Takano, Akihiro Endo, Akira Yoshida, Toyoji Fukui
Author Affiliations +
Abstract
Low Energy Beam Proximity Projection Lithography (LEEPL) has emerged as a lithographic production tool, named as LEEPL-3000, for a 60nm-node DRAM and MPU. The characteristics of this system are wide exposure field, highly-accurate overlay, deep depth of focus (DOF) and little proximity effect. A scanner or a stepper mono-field is able to be exposed by this system and maximum exposure filed size is 46mm x 46mm exclusively for two-or four-divided complementary masks. The acceleration voltage is 2kV and the exposed current varies up to 20μA. The critical dimension (CD) uniformity, including a mask-pattern deviation, is about 8nm as 3σ at 100-nm line and space patterns in 46mm x 46mm filed. A CD-dose margin for 60-nm isolated lines is over 12% and the focus margin is greater than 20μm. The accuracy (3σ) of machine-itself is less than 14nm and that of machine-to-machine is 20-25nm.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Norihiko Samoto, Hideaki Takano, Akihiro Endo, Akira Yoshida, and Toyoji Fukui "LEEPL production tool: EBPrinter LEEPL-3000", Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); https://doi.org/10.1117/12.535109
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Photomasks

Semiconducting wafers

Charged-particle lithography

Optical alignment

Electron beams

Data corrections

Lithography

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