Sub-50-nm isolated line and trench width artifacts for CD metrology

Marco Tortonese; Gian Lorusso; Rene M. Blanquies; Jerry Prochazka; Luca Grella

doi:10.1117/12.536812

24 May 2004 Sub-50-nm isolated line and trench width artifacts for CD metrology

Marco Tortonese, Gian Lorusso, Rene M. Blanquies, Jerry Prochazka, Luca Grella

Proceedings Volume 5375, Metrology, Inspection, and Process Control for Microlithography XVIII; (2004) https://doi.org/10.1117/12.536812
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

We present a technique to produce isolated lines and trenches with arbitrary widths in the range of 12 nm to 500 nm, arbitrary heights and depths in the range of 100 nm to 2 μm, 90-degree sidewall angle, and top corner radii as small as 5 nm. These structures are ideal candidates as Critical Dimension (CD) absolute standards. The sidewall angle can further be varied to create an arbitrary sidewall angle that can be accurately measured.

Citation Download Citation

Marco Tortonese, Gian Lorusso, Rene M. Blanquies, Jerry Prochazka, and Luca Grella "Sub-50-nm isolated line and trench width artifacts for CD metrology", Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); https://doi.org/10.1117/12.536812

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