157-nm photoresist process optimization for a full-field scanner

Scott Light; Nickolay Stepanenko; Roel Gronheid; Frieda Van Roey; Dieter Van den Heuvel; Anne-Marie Goethals

doi:10.1117/12.537212

28 May 2004 157-nm photoresist process optimization for a full-field scanner

Scott Light, Nickolay Stepanenko, Roel Gronheid, Frieda Van Roey, Dieter Van den Heuvel, Anne-Marie Goethals

Proceedings Volume 5377, Optical Microlithography XVII; (2004) https://doi.org/10.1117/12.537212
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

Most 157nm resist optimization to date has been done with micro-steppers, but there may be significant differences in resist profiles and process windows between micro-steppers and full field scanners. Several resists were evaluated on an ASML MS VII full-field 157nm scanner at IMEC. Focus and exposure latitudes were measured for resist lines using various feature sizes and pitches with different reticle types and illumination conditions. Resist sensitivity to post-expose bake temperature were measured. Delay effects, line-edge roughness, line slimming in a CD SEM, and etch resistance were also evaluated.

Citation Download Citation

Scott Light, Nickolay Stepanenko, Roel Gronheid, Frieda Van Roey, Dieter Van den Heuvel, and Anne-Marie Goethals "157-nm photoresist process optimization for a full-field scanner", Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); https://doi.org/10.1117/12.537212

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