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18 April 1985 An Ultra High Temperature Positive Photoresist
John Grunwald, Edwin J. Turner, Allen C. Spencer, David A. Sawoska, Giyora Ben-Shushan
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Proceedings Volume 0539, Advances in Resist Technology and Processing II; (1985) https://doi.org/10.1117/12.947843
Event: 1985 Microlithography Conferences, 1985, Santa Clara, United States
Abstract
This paper discusses the functional performance features of a new positive photoresist designated as ULTRAMAC' PR78T that can be subjected to temperatures up to 220°C. without any changes in the critical dimensions (CD's). No deep UV stabilization, intermediate post bakes, or other stabilization techniques are required to achieve high temperature thermal stability (220°C.). This high temperature positive photoresist is based on a diazo-coupled alkali soluble resin. The resolution and photospeed of this resist, ULTRAMAC' PR78T, are shown to be in the order of 1 micron using a 1.5 microns resist film thickness at 44 mJ/cm2. This resist also has submicron capabilities using step-and-repeat exposure equipment (10:1) utilizing monochromatic 436 nanometer light. ULTRAMAC' PR78T resist shows optimum sensitivity in the 300 - 500 nanometer UV spectral range. In contact or projection exposure equipment, resolution in the order of 1 micron can be achieved using a 1 micron resist film with exposure energies of about 35 mJ/cm2. For steppers using monochromatic light at 436 nanometers, typical exposure energies are in the order of 160 to 180 mJ/cm2, using either metal-ion-free or buffered metal based developers. Contrast (gamma) curves are shown for both metal-ion-free developer, ULTRAMAC' MF72A, and buffered metal containing developer, ULTRAMAC" D71A. High current ion implant data is also presented, showing no resist degradation. Anisotropic plasma/RIE etching selectivity data is also shown on SiO2 and aluminum alloy substrates.
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John Grunwald, Edwin J. Turner, Allen C. Spencer, David A. Sawoska, and Giyora Ben-Shushan "An Ultra High Temperature Positive Photoresist", Proc. SPIE 0539, Advances in Resist Technology and Processing II, (18 April 1985); https://doi.org/10.1117/12.947843
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KEYWORDS
Plasma etching
Etching
Silicon
Anisotropic etching
Ions
Resistance
Metals
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