Improvements To The Dry-Etch Resistance Of Sensitive Positive-Working Electron Resists

Edward D. Roberts

doi:10.1117/12.947824

18 April 1985 Improvements To The Dry-Etch Resistance Of Sensitive Positive-Working Electron Resists

Edward D. Roberts

Proceedings Volume 0539, Advances in Resist Technology and Processing II; (1985) https://doi.org/10.1117/12.947824
Event: 1985 Microlithography Conferences, 1985, Santa Clara, United States

Abstract

A positive-working electron resist, poly-(methacryloyl chloride), which has sensitivity ≈5 μC/cm² at 20 keV is described. The resist is slightly more resistant to erosion in a carbon tetrachloride-based plasma than is poly-(methyl methacrylate). Its erosion rate in the plasma can be further reduced by treating developed film patterns with suitable reagents to introduce into the resist structure aromatic groups or metals. Erosion rates can be reduced to values near those of negative resists containing aromatic groups.

Citation Download Citation

Edward D. Roberts "Improvements To The Dry-Etch Resistance Of Sensitive Positive-Working Electron Resists", Proc. SPIE 0539, Advances in Resist Technology and Processing II, (18 April 1985); https://doi.org/10.1117/12.947824

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