High-density hybrid interconnect technologies

Joachim John; Lars Zimmermann; Piet De Moor; Koen De Munck; Tom Borgers; Chris Van Hoof

doi:10.1117/12.546738

8 September 2004 High-density hybrid interconnect technologies

Joachim John, Lars Zimmermann, Piet De Moor, Koen De Munck, Tom Borgers, Chris Van Hoof

Proceedings Volume 5454, Micro-Optics: Fabrication, Packaging, and Integration; (2004) https://doi.org/10.1117/12.546738
Event: Photonics Europe, 2004, Strasbourg, France

Abstract

The ultra-high density hybrid flip chip integration of an array of detectors and its dedicated readout electronics can be achieved with a variety of solder bump techniques such as pure Indium of Tin alloys, (In, Ni/PbSn), but also conducting polymers, etc. Particularly for cooled applications or ultra-high density applications, Indium solder bump technology (electroplated or evaporated) is the method of choice. The state-of-the-art of solder bump technologies that are to a high degree independent of the underlying detector material will be presented and examples of interconnect densities between 5e4/cm² and 1e6/cm² will be demonstrated. For several classes of detectors, flip-chip integration is not allowed since the detectors have to be illuminated from the top. This applies to image sensors for EUV applications such as GaN/AlGaN based detectors and to MEMS-based detectors. In such cases, the only viable interconnection method has to be through the (thinned) detector wafer followed by a based-based integration. The approaches for dense and ultra-dense through-the-wafer interconnect "vias" will be presented.

Citation Download Citation

Joachim John, Lars Zimmermann, Piet De Moor, Koen De Munck, Tom Borgers, and Chris Van Hoof "High-density hybrid interconnect technologies", Proc. SPIE 5454, Micro-Optics: Fabrication, Packaging, and Integration, (8 September 2004); https://doi.org/10.1117/12.546738

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