Image Characteristics Of A Positive Photoresist On Semiconductor Surfaces And Their Impact On Device Yield

David J. Elliott; Michael T. Nash

doi:10.1117/12.954240

1 March 1974 Image Characteristics Of A Positive Photoresist On Semiconductor Surfaces And Their Impact On Device Yield

David J. Elliott, Michael T. Nash

Proceedings Volume 0055, Technological Advances in Micro and Submicro Photofabrication Imagery; (1974) https://doi.org/10.1117/12.954240
Event: Acquisition and Analysis of Pictorial Data, 1974, San Diego, United States

Abstract

Photoresist processing has been shown to contribute significantly to device yields in integrated circuit manufacturing. Primary factors in photo-resist processing are dimensional reproduction of photomask geometries, sensitivity to environmental and process conditions, and etch protection afforded by the photoresist. These factors are discussed relative to device yield. A series of scanning electron micrographs are presented which attempt to show the importance of adequate photoresist protection in integrated circuit processing. The unique capabilities of a positive photoresist are related to the factors which have the greatest impact on yield: dimensional reproducibility or fidelity, etch protection and tolerance to processing and environmental factors. The role of photoresist processing and its impact upon device yield has been clearly established in integrated circuit manufacturing. The imaging characteristics of a photoresist material plays a vital role in maintaining and improving device yields. Selection of a photo-resist material should, therefore be based upon imaging properties that fulfill the needs for improved device quality and yield. These properties are defined below:

Citation Download Citation

David J. Elliott and Michael T. Nash "Image Characteristics Of A Positive Photoresist On Semiconductor Surfaces And Their Impact On Device Yield", Proc. SPIE 0055, Technological Advances in Micro and Submicro Photofabrication Imagery, (1 March 1974); https://doi.org/10.1117/12.954240

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