Photonic band engineering in opals by growth of Si/Ge multilayer shells

Florencio Garcia-Santamaria; Cefe Lopez; Francisco Meseguer; Paul V. Braun

doi:10.1117/12.561733

14 October 2004 Photonic band engineering in opals by growth of Si/Ge multilayer shells

Florencio Garcia-Santamaria, Cefe Lopez, Francisco Meseguer, Paul V. Braun

Proceedings Volume 5511, Tuning the Optical Response of Photonic Bandgap Structures; (2004) https://doi.org/10.1117/12.561733
Event: Optical Science and Technology, the SPIE 49th Annual Meeting, 2004, Denver, Colorado, United States

Abstract

The optimization of the procedure to grow accurate amounts of amorphous silicon and germanium by chemical vapor deposition (CVD) free of contamination in opals has been performed. The samples have been optically characterized and results agree with theoretical calculations of band structures. Multilayer systems of both semiconductors have been fabricated. Samples have been optically characterized and observed with a scanning electron microscope. Selective removal of germanium with aqua regia has proven to be possible. Theoretical calculations show that subtle variations of the topography may give rise to important effects (flat bands, pseudogap openings, etc). As an example, a photonic band structure with a complete photonic band gap between the 5th and 6th band has been provided along with a method to obtain it. It would be impossible to discuss all the possible structures that could be obtained from samples with different number of layers and materials forming them. However, there are many interesting topographies that could be fabricated in a relatively straightforward manner following the techniques described here.

Citation Download Citation

Florencio Garcia-Santamaria, Cefe Lopez, Francisco Meseguer, and Paul V. Braun "Photonic band engineering in opals by growth of Si/Ge multilayer shells", Proc. SPIE 5511, Tuning the Optical Response of Photonic Bandgap Structures, (14 October 2004); https://doi.org/10.1117/12.561733

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