High-power Al-free active region InGaAsP/GaAs (lambda = 852 nm) laser diodes for atomic clocks and interferometry applications

Francois-Julien Vermersch; Michel Lecomte; Michel Calligaro; Olivier Parillaud; Shailendra Bansropun; Michel Garcia; Michel Krakowski

doi:10.1117/12.572932

23 December 2004 High-power Al-free active region InGaAsP/GaAs (lambda = 852 nm) laser diodes for atomic clocks and interferometry applications

Francois-Julien Vermersch, Michel Lecomte, Michel Calligaro, Olivier Parillaud, Shailendra Bansropun, Michel Garcia, Michel Krakowski

Author Affiliations +

Proceedings Volume 5620, Solid State Laser Technologies and Femtosecond Phenomena; (2004) https://doi.org/10.1117/12.572932
Event: European Symposium on Optics and Photonics for Defence and Security, 2004, London, United Kingdom

Abstract

We have developed Fabry-Perot lasers at λ=852nm, using an Aluminium free active region with the aim to develop a single-frequency and single-mode device for atomic clocks for the future European positioning system Galileo. The device is a separate confinement heterostructure with a GaInP large optical cavity and a 8nm compressive-strained GaInAsP quantum well. The broad-area laser diodes are characterised by low internal losses (<3 cm^-1), a high internal efficiency (94%) and a low transparency current density (100A/cm²). We obtain a low threshold current density (245A/cm²) and a high slope efficiency (0.9 W/A) for 2mm long broad area (100μm wide) AR/HR coated devices. We measure an optical power of more than 5.5W (I= 8.5A), under CW operation at 15°C, with a maximum wall-plug efficiency of 0.45. The laser emission is achieved up to at least 115°C. An optical power of more than 1.4W is obtained at 100°C (I=3.6A). At 852nm, we obtain an optical power of 1.2W (I=1.7A, 15°C). The low divergences of the fast axis far field - a FWHM of 31.8° and a total angle of 61.8° at 1/e²- are very stable with the current.

Citation Download Citation

Francois-Julien Vermersch, Michel Lecomte, Michel Calligaro, Olivier Parillaud, Shailendra Bansropun, Michel Garcia, and Michel Krakowski "High-power Al-free active region InGaAsP/GaAs (lambda = 852 nm) laser diodes for atomic clocks and interferometry applications", Proc. SPIE 5620, Solid State Laser Technologies and Femtosecond Phenomena, (23 December 2004); https://doi.org/10.1117/12.572932

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available