Dual-wavelength 650-780nm laser diodes

WeiLing Guo; GuangDi Shen; JianJun Li; Ting Wang; Guo Gao; Deshu Zou

doi:10.1117/12.580367

31 January 2005 Dual-wavelength 650-780nm laser diodes

WeiLing Guo, GuangDi Shen, JianJun Li, Ting Wang, Guo Gao, Deshu Zou

Proceedings Volume 5624, Semiconductor and Organic Optoelectronic Materials and Devices; (2005) https://doi.org/10.1117/12.580367
Event: Asia-Pacific Optical Communications, 2004, Beijing, China

Abstract

A Novel structure of dual-wavelength semiconductor laser diode is proposed and fabricated. Two laser structures based on two kinds of materials AlGaAs and AlGaInP active layer, which are cascaded by a high doping tunnel junction during the epitaxial growth. The lasers can emit at wavelength of 699nm and 794nm at the same time. Without face coating, the output power of the dual-wavelength laser is high as 50mW at 220mA. And the slope efficiency of these devices is about 0.42A/W.

Citation Download Citation

WeiLing Guo, GuangDi Shen, JianJun Li, Ting Wang, Guo Gao, and Deshu Zou "Dual-wavelength 650-780nm laser diodes", Proc. SPIE 5624, Semiconductor and Organic Optoelectronic Materials and Devices, (31 January 2005); https://doi.org/10.1117/12.580367

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