Gain-switching of a LD end-pumped Nd:YVO4 microchip laser

Fang Sheng; Jun Chen; Jianhong Ge

doi:10.1117/12.575543

20 January 2005 Gain-switching of a LD end-pumped Nd:YVO4 microchip laser

Fang Sheng, Jun Chen, Jianhong Ge

Proceedings Volume 5628, Semiconductor Lasers and Applications II; (2005) https://doi.org/10.1117/12.575543
Event: Photonics Asia, 2004, Beijing, China

Abstract

A study of the gain-switching process and output characteristics in a Nd:YVO₄ microchip laser end-pumped by a fiber-coupled laser diode (LD) is reported here. The gain-switched laser pulses with controllable repetition-rate from 1Hz to 4kHz and pulse width of 16 ns are obtained. To analyze the gain-switching dynamics of the LD end-pumped Nd:YVO₄ microchip laser, a theoretical model has been developed. The model is based on the rate equations of four-level systems and some practical physics conditions. Numerical simulations using the model illustrate the dependence of buildup time, pulse width and peak power of the gain-switched laser pulse on the pumping parameters. The experimental results coincide well with the theoretical analysis.

Citation Download Citation

Fang Sheng, Jun Chen, and Jianhong Ge "Gain-switching of a LD end-pumped Nd:YVO4 microchip laser", Proc. SPIE 5628, Semiconductor Lasers and Applications II, (20 January 2005); https://doi.org/10.1117/12.575543

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