Single-electron transistor coupled to a silicon nano-MOSFET

Victor C. Chan; Tilo Markus Buehler; Dane R. McCamey; Andrew J. Ferguson; David J. Reilly; Changyi Yang; Toby Hopf; Andrew S. Dzurak; A. R. Hamilton; David N. Jamieson; Robert G. Clark

doi:10.1117/12.583293

23 February 2005 Single-electron transistor coupled to a silicon nano-MOSFET

Victor C. Chan, Tilo Markus Buehler, Dane R. McCamey, Andrew J. Ferguson, David J. Reilly, Changyi Yang, Toby Hopf, Andrew S. Dzurak, A. R. Hamilton, David N. Jamieson, Robert G. Clark

Author Affiliations +

Proceedings Volume 5650, Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems II; (2005) https://doi.org/10.1117/12.583293
Event: Smart Materials, Nano-, and Micro-Smart Systems, 2004, Sydney, Australia

Abstract

By capactively coupling sensitive charge detectors (i.e. single-electron transistors - SETs) to nanostructures such as quantum dots and two-dimensional systems, it is possible to investigate charge transport properties in extremely low conduction regimes where direct transport measurements are increasingly difficult. Ion-implanted nano-MOSFETs coupled to aluminium SETs have been constructed in order to study charge transport between locally doped regions in Si at mK temperatures. This configuration allows for direct source-drain measurement as well as non-invasive charge detection. Of particular interest are the effects of material defects and gate control on charge transport, which is of relevance to Si-based quantum computing.

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Victor C. Chan, Tilo Markus Buehler, Dane R. McCamey, Andrew J. Ferguson, David J. Reilly, Changyi Yang, Toby Hopf, Andrew S. Dzurak, A. R. Hamilton, David N. Jamieson, and Robert G. Clark "Single-electron transistor coupled to a silicon nano-MOSFET", Proc. SPIE 5650, Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems II, (23 February 2005); https://doi.org/10.1117/12.583293

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