Simulation of high performance quantum well GaN-based LED

Z. Hassan; N. Zainal; M. R. Hashim; H. Abu Hassan

doi:10.1117/12.598720

28 April 2005 Simulation of high performance quantum well GaN-based LED

Z. Hassan, N. Zainal, M. R. Hashim, H. Abu Hassan

Proceedings Volume 5722, Physics and Simulation of Optoelectronic Devices XIII; (2005) https://doi.org/10.1117/12.598720
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

The performance of quantum well GaN/AlGaN light emitting diode (LED) is reviewed for three different barrier compositions; symmetric barrier composition with low Al content, asymmetric barrier composition with higher Al content on p-type cladding layer and lower Al content on n-type cladding layer, and symmetric barrier composition with higher Al content. The study was conducted using ATLAS/BLAZE & LUMINOUS software developed by Silvaco International Inc. Integrated radiative recombination rate was studied on applied voltages up to 5V. Results showed three phases of LED performance with different applied voltages and these were explained using bandgap theory. I-V characteristic for each design agrees with the total additional voltage drop equation for a quantum well structure. The dominant radiative recombination rate regions in LED at low and high supplied voltages are also presented for the best performance LED design.

Citation Download Citation

Z. Hassan, N. Zainal, M. R. Hashim, and H. Abu Hassan "Simulation of high performance quantum well GaN-based LED", Proc. SPIE 5722, Physics and Simulation of Optoelectronic Devices XIII, (28 April 2005); https://doi.org/10.1117/12.598720

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