An electrostatic analysis of subthreshold behavior in FINFET

Balasubramanian Murugan; Rama Venkat; Samar Saha

doi:10.1117/12.597698

17 May 2005 An electrostatic analysis of subthreshold behavior in FINFET

Balasubramanian Murugan, Rama Venkat, Samar Saha

Proceedings Volume 5755, Data Analysis and Modeling for Process Control II; (2005) https://doi.org/10.1117/12.597698
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

This paper investigates the subthreshold behavior of Fin Field Effect Transistor (FINFET) by solving 3D Laplace, and Poisson equations. Based on the potential distribution inside the fin, the appropriate band bending and the change in the band bending (∂ψ_s) were calculated. Three-dimensional analysis of (∂ψ_s) the change in the band bending indicates that (∂ψ_s)is less (by ~ 20% for a channel width (T_fin) of 20 nm) in the middle of the channel compared to that at the Si-Si_O2 interface. The decrease in (∂ψ_s) towards the middle of the channel indicates that the control of the gate decreases towards the middle of the channel. Simulation results show that the S-factor of the device increases as T_fin increases. It is observed that the S-factors calculated from the Laplace and the Poisson equations differ by ~7% for a device with a T_fin = 50 nm. However this difference in S-factor gradually decreases and for smaller channel width devices, the S-factors calculated using Laplace and Poisson equations are the same. A comparison of S-factors obtained from Laplace and Poisson equation shows that the S-factor obtained from Poisson equation agrees very well with the reported experimental results. Thus, the systemic study of subthreshold behavior of FinFET shows that it is most appropriate to determine the S-factor of wider channel devices by solving 3D Poisson equation with appropriate doping concentration.

Citation Download Citation

Balasubramanian Murugan, Rama Venkat, and Samar Saha "An electrostatic analysis of subthreshold behavior in FINFET", Proc. SPIE 5755, Data Analysis and Modeling for Process Control II, (17 May 2005); https://doi.org/10.1117/12.597698

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KEYWORDS

Oxides

Doping

Field effect transistors

Dielectrics

Germanium

Silicon

Bismuth

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