Paper
31 May 2005 High performance Type II InAs/GaSb superlattices for mid, long, and very long wavelength infrared focal plane arrays
M. Razeghi, Y. Wei, A. Gin, A. Hood, V. Yazdanpanah, M. Z. Tidrow, V. Nathan
Author Affiliations +
Abstract
We present our most recent results and review our progress over the past few years regarding InAs/GaSb Type II superlattices for photovoltaic detectors and focal plane arrays. Empirical tight binding methods have been proven to be very effective and accurate in designing superlattices for various cutoff wavelengths from 3.7 μm up to 32 μm. Excellent agreement between theoretical calculations and experimental results has been obtained. High quality material growths were performed using an Intevac modular Gen II molecular beam epitaxy system. The material quality was characterized using x-ray, atomic force microscopy, transmission electron microscope and photoluminescence, etc. Detector performance confirmed high material electrical quality. Details of the demonstration of 256×256 long wavelength infrared focal plane arrays will be presented.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Razeghi, Y. Wei, A. Gin, A. Hood, V. Yazdanpanah, M. Z. Tidrow, and V. Nathan "High performance Type II InAs/GaSb superlattices for mid, long, and very long wavelength infrared focal plane arrays", Proc. SPIE 5783, Infrared Technology and Applications XXXI, (31 May 2005); https://doi.org/10.1117/12.605291
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Cited by 19 scholarly publications.
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KEYWORDS
Superlattices

Sensors

Staring arrays

Gallium antimonide

Luminescence

Interfaces

Long wavelength infrared

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