Transient simulations of dilute magnetic semiconductors RTDs

Harold L. Grubin

doi:10.1117/12.603238

18 May 2005 Transient simulations of dilute magnetic semiconductors RTDs (Invited Paper)

Harold L. Grubin

Proceedings Volume 5790, Terahertz for Military and Security Applications III; (2005) https://doi.org/10.1117/12.603238
Event: Defense and Security, 2005, Orlando, Florida, United States

Abstract

We present the development of a set of electron and hole quantum transport equations for barrier devices with dilute magnetic semiconductor (DMS) regions. The equations are developed from the time dependent equation of motion of the density matrix equation in the coordinate representation, leading to both the transient spin Wigner equations and the 'classical' spin drift and diffusion equations for high 'g' factor DMS materials. The role of DMS layers is illustrated for two structures; one where the DMS layer is confined to the first barrier, and another with DMS emitter and collector barriers. In each case we obtain the spinup and spindown carrier and current distributions, from self-consistent solutions to the transient spin dependent Wigner equation. Negative differential conductance as well as the significant unequal spinup and spin down charge distributions are obtained.

Citation Download Citation

Harold L. Grubin "Transient simulations of dilute magnetic semiconductors RTDs (Invited Paper)", Proc. SPIE 5790, Terahertz for Military and Security Applications III, (18 May 2005); https://doi.org/10.1117/12.603238

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