Evaluations of optical performance for micro-trench on quartz etch in ArF lithography

Won-Suk Ahn; Hyuk-Joo Kwon; Seong-Yong Moon; Seong-Woon Choi; Woo-Sung Han

doi:10.1117/12.617227

28 June 2005 Evaluations of optical performance for micro-trench on quartz etch in ArF lithography

Won-Suk Ahn, Hyuk-Joo Kwon, Seong-Yong Moon, Seong-Woon Choi, Woo-Sung Han

Proceedings Volume 5853, Photomask and Next-Generation Lithography Mask Technology XII; (2005) https://doi.org/10.1117/12.617227
Event: Photomask and Next Generation Lithography Mask Technology XII, 2005, Yokohama, Japan

Abstract

As promising technologies for ArF optical lithography, CLM(Chrome-Less Mask) and alternating phase shift mask(PSM) technologies among RETs(Resolution Enhancement Techniques) for low k₁ have been researched worldwide for a couple of decades. Quartz dry etching has become more critical to manufacture the mask with those technologies in the ArF lithography. Alternating PSM and CLM require the formation of 180-degree phase difference by quartz dry etch. There are many error factors, which can influence CD uniformities on mask and wafers, in dry etch step such as micro-trench, depth uniformity, sidewall angle, and morphology. Furthermore, quartz depth is hard to control because there is no stopping layer for quartz etch. Micro-trench, one of the important factors on quartz etch, can drop light intensity on wafer. Therefore, micro-trench can deteriorate the RET. We investigated characteristics of micro-trench during quartz dry etch process and the influences on resolution, which can be improved by dry etch parameters.

Citation Download Citation

Won-Suk Ahn, Hyuk-Joo Kwon, Seong-Yong Moon, Seong-Woon Choi, and Woo-Sung Han "Evaluations of optical performance for micro-trench on quartz etch in ArF lithography", Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); https://doi.org/10.1117/12.617227

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