Paper
18 August 2005 High efficient photovoltaic power converter suitable for 920nm to 970nm InGaAs laser diodes
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Abstract
In this work, we report a highly efficient Photovoltaic Power Converter (PPC) suitable for 920 nm to 970 nm InGaAs MQW lasers for the first time. The epitaxial layers were grown by low pressure MOCVD on the semi-insulting GaAs substrate. The epi layers consist of a p-n junction of In0.12Ga0.88As and the window layer of p+ AlInGaAs. The device is made of seven or eight pie-segments of equal area series-connected by means of air-bridges. Under 500mW of 940nm laser illumination, the open-circuit voltage of the eight-segment InGaAs chip is 6.7V. The short-circuit current is 29.7mA. Its maximum delivered electrical power is 171.2mW, equal to a 34.2% overall power conversion efficiency. We also demonstrate the high temperature characteristic and stability of the device.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James Liu, Ta-Chung Wu, Mort Cohen, and Jan G. Werthen "High efficient photovoltaic power converter suitable for 920nm to 970nm InGaAs laser diodes", Proc. SPIE 5871, Optical Technologies for Arming, Safing, Fuzing, and Firing, 58710D (18 August 2005); https://doi.org/10.1117/12.618445
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Cited by 2 scholarly publications.
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KEYWORDS
Indium gallium arsenide

Gallium arsenide

Photovoltaics

Temperature metrology

Semiconductor lasers

Crystals

Diodes

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