High quality InAs<sub>0.04</sub>Sb<sub>0.96</sub>/GaAs single crystals with a cutoff wavelength of 12 &#956;m grown by melt epitaxy

Yu Zhu Gao; Xiu Ying Gong; Yong Hai Chen; Tomuo Yamaguchi

doi:10.1117/12.667763

23 January 2006 High quality InAs_0.04Sb_0.96/GaAs single crystals with a cutoff wavelength of 12 μm grown by melt epitaxy

Yu Zhu Gao, Xiu Ying Gong, Yong Hai Chen, Tomuo Yamaguchi

Author Affiliations +

Proceedings Volume 6029, ICO20: Materials and Nanostructures; 60291I (2006) https://doi.org/10.1117/12.667763
Event: ICO20:Optical Devices and Instruments, 2005, Changchun, China

Abstract

The InAs_0.04Sb_0.96 epilayers with a cutoff wavelength of 12 μm were successfully grown on semi-insulating (100) GaAs substrates using melt epitaxy (ME). Fourier transform infrared (FTIR) transmission spectra reveal a strongly band gap narrowing for this alloy. A room-temperature band gap of 0.1055 eV is demonstrated via analyzing the temperature dependence of the carrier density for the InAs_0.04Sb_0.96 layers, which is in good agreement with the value obtained by transmittance measurements. The temperature dependence of energy band gap for InAs_0.04Sb_0.96/GaAs is studied between 12 K and 300 K by measuring the absorption spectra. An electron mobility of 44,700 cm²/Vs with a carrier density of 8.77 × 10¹⁵ cm^-3 at 300 K, an electron mobility of 21,500 cm²/Vs with a carrier density of 1.57 × 1015 cm^-3 at 77 K, and a peak electron mobility of 48,000 cm²/Vs at 245 K have been achieved for a 100 μm thick epilayer. These results indicate its potential applications for infrared photodetectors and high-speed electron devices.

Citation Download Citation

Yu Zhu Gao, Xiu Ying Gong, Yong Hai Chen, and Tomuo Yamaguchi "High quality InAs_0.04Sb_0.96/GaAs single crystals with a cutoff wavelength of 12 μm grown by melt epitaxy", Proc. SPIE 6029, ICO20: Materials and Nanostructures, 60291I (23 January 2006); https://doi.org/10.1117/12.667763

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