KOH etching process of perfect square MEMS corrugated diaphragm

N. Soin; Burhanudin Y. Majlis

doi:10.1117/12.637586

3 January 2006 KOH etching process of perfect square MEMS corrugated diaphragm

N. Soin, Burhanudin Y. Majlis

Proceedings Volume 6037, Device and Process Technologies for Microelectronics, MEMS, and Photonics IV; 60371Z (2006) https://doi.org/10.1117/12.637586
Event: Microelectronics, MEMS, and Nanotechnology, 2005, Brisbane, Australia

Abstract

In this paper, silicon corrugated diaphragms with non-compensated and compensated mask layout have been fabricated on a single silicon (100) wafer by using potassium hydroxide (KOH) etching technique. Although, recently corrugated diaphragms have been used for a diaphragm structure due to its excellent properties, no theoretical and analytical studies on the fabrication process of these diaphragms have been performed. Therefore, the characterization of the KOH etching process with emphasized on convex corner behavior has been studied through both experiments and simulations in order to realize the perfect corrugated diaphragm. Details of the etching of corrugated diaphragms have been studied by using process simulation software of a three-dimensional anisotropic etching profile prior to fabrication process. The influence of the KOH etching temperature and concentration on the convex corner undercutting of corrugated diaphragm are observed. The convex corner behavior has been analyzed based on the geometrical parameters and the new emergent high index silicon planes. It was found that the convex corner undercutting phenomena is significantly reduced at low etching temperature and high KOH concentration respectively. It can be concluded that the prominent facets contributing to the undercutting of the convex corners of the corrugated diaphragm for the given etching condition coincide with the {411} plane. The introduction of the additional mask layout for the protection of convex corners at all convex-mask geometry of the corrugated diaphragm during the KOH etching process has been proved by simulation to produce almost perfect square corners. These simulation results have been confirmed by experiments.

Citation Download Citation

N. Soin and Burhanudin Y. Majlis "KOH etching process of perfect square MEMS corrugated diaphragm", Proc. SPIE 6037, Device and Process Technologies for Microelectronics, MEMS, and Photonics IV, 60371Z (3 January 2006); https://doi.org/10.1117/12.637586

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available