Paper
23 March 2006 Characterizing nanoimprint pattern cross-section and fidelity from x-ray reflectivity
Author Affiliations +
Abstract
To address several of the challenges associated with nanoimprint lithography, new measurement techniques that can correlate the physical structure of an imprinted nanostructure with the materials used and the imprinting conditions are critical for optimizing imprint processes. Specular X-ray reflectivity (SXR) is a widely used technique to quantify the thickness, density, and roughness of the non-patterned films. Here we extend the applicability of SXR to imprinted nanostructures by characterizing the pattern height, the line-to-space ratio as a function of pattern height, the residual layer thickness, and the fidelity of pattern transfer.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hae-Jeong Lee, Christopher L. Soles, Hyun Wook Ro, D. R. Hines, Ronald L. Jones, Eric K. Lin, Alamgir Karim, and Wen-li Wu "Characterizing nanoimprint pattern cross-section and fidelity from x-ray reflectivity", Proc. SPIE 6151, Emerging Lithographic Technologies X, 61510N (23 March 2006); https://doi.org/10.1117/12.656826
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Silicon

Reflectivity

X-rays

Data modeling

Nanoimprint lithography

Oxides

Scattering

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