Paper
24 March 2006 Correlation of scatterometry sensitivities to variation in device parameters
Author Affiliations +
Abstract
Scatterometry has been demonstrated to be a useful measurement technique, which allows to examine a full reconstruction of the measured structure in the semiconductor process, e.g. CD, thickness, and overlay. Even though the potential of such technique has been known for many years, the challenge for extracting quickly and accurately the relevant constitutive parameters from a diffractive signature remains. In general, the device parameters are determined by finding the minimum RMSE (root mean square error) between a measured signature and theoretical signatures in the model-based library without considering the correlation among these parameters, which induces the match error problem. This study presents a novel method, applying neural network algorithm to identify the correlation between device parameters, to reduce the correlation-induced error and increase measurement precision.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chun-Hung Ko, Yi-sha Ku, and Nigel Smith "Correlation of scatterometry sensitivities to variation in device parameters", Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 615220 (24 March 2006); https://doi.org/10.1117/12.656147
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Critical dimension metrology

Neural networks

Evolutionary algorithms

Scatterometry

Detection and tracking algorithms

Reflectivity

Target detection

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