Paper
29 March 2006 Negative nanomolecular resists based on calix[4]resorcinarene
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Abstract
Negative working nanomolecular resists based on fully epoxy-protected tetra-Cmethylcalix[4]resorcinarene (epoxy C-4-R) and oxetanyl-protected tetra-methylcalix[4]resocinarene (oxetanyl C-4-R) have been developed. They were prepared by the reaction of C-4-R with epichlorohydrin or in the presence of trimethylamine. They can be coated on the silicon wafer by spin-coating method. A clear film cast from a 20 wt% epoxy C-4-R solution in chloroform showed high transparency to UV above 300 nm. A fine negative image featuring 0.8 μm of minimum line and space patterns was observed on the film of the photoresist exposed to 40 mJ/ cm2 of Near UV-light by the contact mode.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tae-Hwan Oh, Ramakrishnan Ganesan, Je-Moon Yoon, and Jin-Baek Kim "Negative nanomolecular resists based on calix[4]resorcinarene", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61532G (29 March 2006); https://doi.org/10.1117/12.660111
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Cited by 7 scholarly publications.
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KEYWORDS
Epoxies

Lithography

Semiconducting wafers

Silicon

Photoresist materials

Etching

Scanning electron microscopy

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