Epitaxy of GaN LEDs on large substrates: Si or sapphire?

A. Dadgar; C. Hums; A. Diez; F. Schulze; J. Bläsing; A. Krost

doi:10.1117/12.691576

21 September 2006 Epitaxy of GaN LEDs on large substrates: Si or sapphire?

A. Dadgar, C. Hums, A. Diez, F. Schulze, J. Bläsing, A. Krost

Proceedings Volume 6355, Advanced LEDs for Solid State Lighting; 63550R (2006) https://doi.org/10.1117/12.691576
Event: Asia-Pacific Optical Communications, 2006, Gwangju, South Korea

Abstract

We present first results on the limits of GaN growth on large diameter sapphire and the challenges that have to be solved for a successful growth of high power LEDs on silicon substrates. Up to 5.4 μm thick crack-free GaN on Si(111) LED structures were grown by metalorganic chemical vapor phase epitaxy. The FWHM of the GaN (0002) ω scan in x-ray diffraction amounts to 380 arcsec. On Si substrates, we achieve low curvatures with radii > 50 m, which is important for a successful processing of the samples on large diameter substrates. Additionally, a low curvature during InGaN multi-quantum-well growth is achieved and enables the growth of homogenous InGaN layers. The main difficulty for GaN-on-Si is light extraction, which leads to an approximately three- to four-fold reduction in direct comparison with GaN LEDs on sapphire.

Citation Download Citation

A. Dadgar, C. Hums, A. Diez, F. Schulze, J. Bläsing, and A. Krost "Epitaxy of GaN LEDs on large substrates: Si or sapphire?", Proc. SPIE 6355, Advanced LEDs for Solid State Lighting, 63550R (21 September 2006); https://doi.org/10.1117/12.691576

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