PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The fabrication and characterization of the p-i-n optical waveguide modulators on silicon-on-insulator (SOI) substrate
were demonstrated. The modulation was based on the mechanism of carrier injection, or plasma dispersion effect. The
corresponding p and n regions were defined in both types of silicon substrates (conventional p-doped and highly resistive
SOI substrates with respective resistivities of &rgr;~7-10&OHgr;-cm and &rgr;~7000-10000&OHgr;-cm) using the spin-on-dopant (SOD)
technique. The SOD diffusion process was conducted at 900-1000°C in nitrogen ambient. The diffusion time and
temperature, and the resistivity of SOI substrate used were the primary parameters dictating the resultant dopant
concentrations and diffusion depths. For the modulators fabricated with various waveguide widths and electrode lengths,
the corresponding modulation index was enhanced in response to an increase in the electrode (or modulation) length
and/or a decrease in waveguide width. The highest modulation index of ~4.15% was successfully achieved for a silicon
p-i-n waveguide modulator with 5&mgr;m,wide waveguide and 7mm-long modulation electrode.
Mao-Teng Hsu,Ricky W. Chuang, andJia-Ching Liao
"Silicon p-i-n optical waveguide modulators fabricated on the silicon and silicon-on-insulator substrates", Proc. SPIE 6475, Integrated Optics: Devices, Materials, and Technologies XI, 64751A (7 March 2007); https://doi.org/10.1117/12.700601
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Mao-Teng Hsu, Ricky W. Chuang, Jia-Ching Liao, "Silicon p-i-n optical waveguide modulators fabricated on the silicon and silicon-on-insulator substrates," Proc. SPIE 6475, Integrated Optics: Devices, Materials, and Technologies XI, 64751A (7 March 2007); https://doi.org/10.1117/12.700601