Paper
5 April 2007 OCD metrology by floating n/k
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Abstract
In this paper, one of the major contributions to the OCD metrology error, resulting from within-wafer variation of the refractive index/extinction coefficient (n/k) of the substrate, is identified and quantified. To meet the required metrology accuracy for the 65-nm node and beyond, it is suggested that n/k should be floating when performing the regression for OCD modeling. A feasible way of performing such regression is proposed and verified. As shown in the presented example, the measured CDU (3σ) with n/k fixed and n/k floating is 1.94 nm and 1.42 nm, respectively. That is, the metrology error of CDU committed by assuming n/k fixed is more than 35% of the total CDU.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shinn-Sheng Yu, Jacky Huang, Chih-Ming Ke, Tsai-Sheng Gau, Burn J. Lin, Anthony Yen, Lawrence Lane, Vi Vuong, and Yan Chen "OCD metrology by floating n/k", Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65183C (5 April 2007); https://doi.org/10.1117/12.713341
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Cited by 3 scholarly publications.
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KEYWORDS
Metrology

Semiconducting wafers

Critical dimension metrology

Lithography

Thin films

Deposition processes

Process control

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