Nonchemically amplified resists for deep-UV lithography

Ramakrishnan Ganesan; Sumin Kim; Seul Ki Youn; Youngook Cho; Jei-Moon Yun; Jin-Baek Kim

doi:10.1117/12.712113

2 April 2007 Nonchemically amplified resists for deep-UV lithography

Ramakrishnan Ganesan, Sumin Kim, Seul Ki Youn, Youngook Cho, Jei-Moon Yun, Jin-Baek Kim

Proceedings Volume 6519, Advances in Resist Materials and Processing Technology XXIV; 65192J (2007) https://doi.org/10.1117/12.712113
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

A novel monomer containing a diazoketo functional group was designed and synthesized. Polymers were synthesized using the diazoketo-functionalized monomer and their physical properties were evaluated. The polymers were synthesized by radical copolymerization of cholic acid 3-diazo-3-ethoxycarbonyl-2-oxo-propyl ester methacrylate, methyl methacrylate, and γ-butyrolacton-2-yl methacrylate. These polymers showed 0.7 &mgr;m line and space patterns using a mercury-xenon lamp in a contact printing mode.

Citation Download Citation

Ramakrishnan Ganesan, Sumin Kim, Seul Ki Youn, Youngook Cho, Jei-Moon Yun, and Jin-Baek Kim "Nonchemically amplified resists for deep-UV lithography", Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65192J (2 April 2007); https://doi.org/10.1117/12.712113

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