Medium-Index Mixed-Oxide Layers for Use in AR-Coatings

Peter Ganner

doi:10.1117/12.938360

13 October 1986 Medium-Index Mixed-Oxide Layers for Use in AR-Coatings

Peter Ganner

Proceedings Volume 0652, Thin Film Technologies II; (1986) https://doi.org/10.1117/12.938360
Event: 1986 International Symposium/Innsbruck, 1986, Innsbruck, Austria

Abstract

Ttedesign philosophy of MC-AR-Coatings can be divided into two categories: a) Restriction to two film materials, namely one high-index and one low-index material and b) Use of medium-index layers in addition to high- and low-index layers. Both philosophies have advan-tages and drawbacks. In case a) the total number of layers necessary to obtain a required reflectance curve has to be higher. Thus in case of production errors it can be a problem to find out which layer was responsible for a deviation of the measured reflectance from the nominal one. In case b) using more than two materials reduces the total number of layers and consequently, pinpointing the cause of even small production errors is made simpler. Unfortunately there are not many materials commercially available which can be used to make hard, durable and robust films in the medium-index range namely between n=1.65 and n=2.00. In this paper the results of homogeneous mixtures of Alumina (Al₂0₃) and Tantala (Ta₂0₅) used for EB-gun evaporated medium-index films in AR-coatings is presented. It is shown that by proper adjustment of the weight percentages of the oxide mixture one can get homogeneous films in this index range. A number of design examples show the favourable application of such layers in AR-coatings. Among the most important ones is the well known QHQ-design for BBAR-coatings as well as AR-designs of the multiple half wave type with extended bandwidth. Further applications of the mixed-oxide layers are AR-coatings for cemented optical elements and beam splitters.

Citation Download Citation

Peter Ganner "Medium-Index Mixed-Oxide Layers for Use in AR-Coatings", Proc. SPIE 0652, Thin Film Technologies II, (13 October 1986); https://doi.org/10.1117/12.938360

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