Ultra-low <i>k</i><sub>1</sub> oxide contact hole formation and metal filling using resist contact hole pattern by double L&S formation method

Hiroko Nakamura; Mitsuhiro Omura; Souichi Yamashita; Yasuyuki Taniguchi; Junko Abe; Satoshi Tanaka; Soichi Inoue

doi:10.1117/12.709133

26 March 2007 Ultra-low k₁ oxide contact hole formation and metal filling using resist contact hole pattern by double L&S formation method

Hiroko Nakamura, Mitsuhiro Omura, Souichi Yamashita, Yasuyuki Taniguchi, Junko Abe, Satoshi Tanaka, Soichi Inoue

Author Affiliations +

Proceedings Volume 6520, Optical Microlithography XX; 65201E (2007) https://doi.org/10.1117/12.709133
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

It was shown previously that the Double Line and Space (L&S) Formation Method (DLFM) is superior to other methods for forming a dense contact hole (C/H) resist pattern by simulation and 0.30 k₁ 1:1 C/H resist pattern was formed experimentally. In this paper, a through process of C/H formation from resist patterning to metal filling is presented. The square C/Hs transferred to an oxide film from the resist pattern formed by the DLFM could be filled with metal, although the transferred C/Hs had square corners in comparison with the conventional C/H resist patterning. On the other hand, the combination of the DLFM and the 'Pack and Cover Process' makes it possible to form resist random C/Hs on grids. So, the possibility of forming random C/Hs filled with metal is shown. Moreover, the resolution limit of the DLFM is discussed. 0.29 k₁ (half pitch 65 nm) and 0.27 k₁ (half pitch 56 nm) 1:1 C/H resist pattern could be formed with optimized dipole illumination. So, random C/Hs with k₁ below 0.30 are expected to be formed.

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Hiroko Nakamura, Mitsuhiro Omura, Souichi Yamashita, Yasuyuki Taniguchi, Junko Abe, Satoshi Tanaka, and Soichi Inoue "Ultra-low k₁ oxide contact hole formation and metal filling using resist contact hole pattern by double L&S formation method", Proc. SPIE 6520, Optical Microlithography XX, 65201E (26 March 2007); https://doi.org/10.1117/12.709133

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