Paper
1 May 2007 Unamplified direct detection W-band imaging array
J. N. Schulman, J. J. Lynch, H. P. Moyer, J. H. Schaffner, R. L. Bowen, Y. Royter, M. Sokolich, R. D. Rajavel
Author Affiliations +
Abstract
We are developing a passive W-band millimeter wave imaging array that operates without the use of RF low noise amplifiers. The work is supported by the DARPA MIATA program. Previously reported Phase I results were a noise equivalent temperature difference (NETD) of 4.8°K. The goal of Phase II, currently underway, is to decrease this to 2°K or less. There are two improvements that must be made to achieve the goal. The square law diode detector sensitivity and the RF bandwidth reaching the detector must be increased significantly. This paper mainly deals with the first issue, the effort to increase the sensitivity by decreasing the diode area and capacitance, using electron beam lithography. Brief mention will be made of the redesign of the antenna-to-diode transition that simulations indicate will provide a doubling of bandwidth from 30 to 60 GHz.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. N. Schulman, J. J. Lynch, H. P. Moyer, J. H. Schaffner, R. L. Bowen, Y. Royter, M. Sokolich, and R. D. Rajavel "Unamplified direct detection W-band imaging array", Proc. SPIE 6548, Passive Millimeter-Wave Imaging Technology X, 65480F (1 May 2007); https://doi.org/10.1117/12.723308
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Cited by 3 scholarly publications.
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KEYWORDS
Diodes

Sensors

Capacitance

Semiconducting wafers

Imaging arrays

Resistance

Cameras

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