Effects of exposure environment on pellicle degradation in ArF lithography

Hyungseok Choi; Yohan Ahn; Jeongin Yoon; Yangkoo Lee; Yongjhin Cho; Jongann Kim

doi:10.1117/12.746857

30 October 2007 Effects of exposure environment on pellicle degradation in ArF lithography

Hyungseok Choi, Yohan Ahn, Jeongin Yoon, Yangkoo Lee, Yongjhin Cho, Jongann Kim

Proceedings Volume 6730, Photomask Technology 2007; 67300B (2007) https://doi.org/10.1117/12.746857
Event: SPIE Photomask Technology, 2007, Monterey, California, United States

Abstract

With the introduction of ArF laser, its high photon energy affects the pellicle degradation in direct. The components outgassed from the damaged pellicle have the effect on the CD variation of reticle. In order to resolve this new inevitable problem, the method of dry gas purge has been proposed among the various solutions recently. Dry gas purge method is generally applied to two applications. It can be applied to a storage environment such as reticle stocker, reticle SMIF pod and reticle library in scanner and to the exposure chamber inside of a scanner during ArF laser exposure phase directly. In this case, it is quite important technologically that which gas is determined as dry purge gas, pure nitrogen or CDA (clean dry air). In this study, the effects of exposure environment on pellicle degradation according to dry purge gas and their mechanism has been investigated to propose strategies and solutions of dry gas purge technology.

Citation Download Citation

Hyungseok Choi, Yohan Ahn, Jeongin Yoon, Yangkoo Lee, Yongjhin Cho, and Jongann Kim "Effects of exposure environment on pellicle degradation in ArF lithography", Proc. SPIE 6730, Photomask Technology 2007, 67300B (30 October 2007); https://doi.org/10.1117/12.746857

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KEYWORDS

Pellicles

Reticles

Nitrogen

Lithography

Laser bonding

Oxygen

Laser energy

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