Compositional analysis of progressive defects on a photomask

Koichiro Saga; Hiroichi Kawahira

doi:10.1117/12.746375

30 October 2007 Compositional analysis of progressive defects on a photomask

Koichiro Saga, Hiroichi Kawahira

Proceedings Volume 6730, Photomask Technology 2007; 673019 (2007) https://doi.org/10.1117/12.746375
Event: SPIE Photomask Technology, 2007, Monterey, California, United States

Abstract

Progressive mask defects are a critical mask-reliability issue in DUV lithography. It is well known that the majority of the defects are ammonium sulfates. We have found using ToF-SIMS that metallic atoms are localized at ammonium-sulfate defects on the mask surface, can influence the growth of the defects. Carbon compounds containing nitrogen atoms are also localized at the some defects. These carbon compounds are the result of the adsorption of organic volatiles outgassing from a reticle SMIF pod. Metal residues and organic contamination on a photomask as well as airborne acidic and basic contamination must be controlled to avoid progressive defects on photomasks.

Citation Download Citation

Koichiro Saga and Hiroichi Kawahira "Compositional analysis of progressive defects on a photomask", Proc. SPIE 6730, Photomask Technology 2007, 673019 (30 October 2007); https://doi.org/10.1117/12.746375

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available