Paper
21 December 2007 Low-voltage organic strain sensor on plastic using polymer/high- K inorganic hybrid gate dielectrics
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Proceedings Volume 6798, Microelectronics: Design, Technology, and Packaging III; 679810 (2007) https://doi.org/10.1117/12.759497
Event: SPIE Microelectronics, MEMS, and Nanotechnology, 2007, Canberra, ACT, Australia
Abstract
In this paper, gate-induced pentacene semiconductor strain sensors based on hybrid-gate dielectrics using poly-vinylphenol (PVP) and high-K inorganic, Ta2O5 are fabricated on flexible substrates, polyethylene naphthalate (PEN). The Ta2O5 gate dielectric layer is combined with a thin PVP layer to obtain very smooth and hydrophobic surfaces which improve the molecular structures of pentacene films. The PVP-Ta2O5 hybrid-gate dielectric films exhibit a high dielectric capacitance and low leakage current. The sensors adopting thin film transistor (TFT)-like structures show a significantly reduced operating voltage (~6V), and good device characteristics with a field-effect mobility of 1.89 cm2/V•s, a threshold voltage of -0.5 V, and an on/off ratio of 103. The strain sensor, one of the practical applications in large-area organic electronics, was characterized with different bending radii of 50, 40, 30, and 20 mm. The sensor output signals were significantly improved with low-operating voltages.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Soyoun Jung, Taeksoo Ji, and Vijay K. Varadan "Low-voltage organic strain sensor on plastic using polymer/high- K inorganic hybrid gate dielectrics", Proc. SPIE 6798, Microelectronics: Design, Technology, and Packaging III, 679810 (21 December 2007); https://doi.org/10.1117/12.759497
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KEYWORDS
Dielectrics

Sensors

Tantalum

Polymers

Electrodes

Thin films

Organic electronics

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