Joining of thin glass with semiconductors by ultra-fast high-repetition laser welding

Alexander Horn; Ilja Mingaeev; Alexander Werth; Martin Kachel

doi:10.1117/12.762337

23 February 2008 Joining of thin glass with semiconductors by ultra-fast high-repetition laser welding

Alexander Horn, Ilja Mingaeev, Alexander Werth, Martin Kachel

Proceedings Volume 6880, Laser-based Micro- and Nanopackaging and Assembly II; 68800A (2008) https://doi.org/10.1117/12.762337
Event: Lasers and Applications in Science and Engineering, 2008, San Jose, California, United States

Abstract

Lighting applications like OLED or on silicon for electro-optical applications need a reproducible sealing process. The joining has to be strong, the permeability for gasses and humidity very low and the process itself has to be very localized not affecting any organic or electronic parts inside the sealed region. The actual sealing process using glue does not fulfil these industrial needs. A new joining process using ultra-fast laser radiation offers a very precise joining with geometry dimensions smaller than 50 μm. Ultra-fast laser radiation is absorbed by multi-photon absorption in the glass. Due to the very definite threshold for melting and ablation the process of localized heating can be controlled without cracking. Repeating the irradiation at times smaller than the heat diffusion time the temperature in the focus is increased by heat accumulation reaching melting of the glass. Mowing the substrate relatively to the laser beam generates a seal of re-solidified glass. Joining of glass is achieved by positioning the laser focus at the interface. A similar approach is used for glass-silicon joining. The investigations presented will demonstrate the joining geometry by microscopy of cross-sections achieved by welding two glass plates (Schott D263 and AF45) with focused IR femtosecond laser radiation (wavelength λ = 1045nm, repetition rate f = 1 MHz, pulse duration t_p = 500 fs, focus diameter w₀ = 4 μm, feeding velocity v= 1-10 mm/s). The strength of the welding seam is measured by tensile stress measurements and the gas and humidity is detected. A new diagnostic method for the on-line detection of the welding seam properties will be presented. Using a non-interferometric technique by quantitative phase microscopy the refractive index is measured during welding of glass in the time regime 0-2 μs. By calibration of the measured refractive index with a relation between refractive index and temperature a online-temperature detection can be achieved.

Citation Download Citation

Alexander Horn, Ilja Mingaeev, Alexander Werth, and Martin Kachel "Joining of thin glass with semiconductors by ultra-fast high-repetition laser welding", Proc. SPIE 6880, Laser-based Micro- and Nanopackaging and Assembly II, 68800A (23 February 2008); https://doi.org/10.1117/12.762337

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