Proposal for (110) InAs/GaSb superlattices for infrared detection

F. Szmulowicz; H. J. Haugan; G. J. Brown

doi:10.1117/12.763738

1 February 2008 Proposal for (110) InAs/GaSb superlattices for infrared detection

F. Szmulowicz, H. J. Haugan, G. J. Brown

Proceedings Volume 6900, Quantum Sensing and Nanophotonic Devices V; 69000L (2008) https://doi.org/10.1117/12.763738
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

This paper discusses the potential attributes of (110)-grown InAs/GaSb superlattices for infrared detection applications. In comparison to (001)-grown structures, (110) SLs will be thinner, have higher mobilities, diffusion lengths, quantum efficiencies, and gains. Unless growth issues arise, they should also have higher minority carrier lifetimes, higher responsivities, lower noise, and higher detectivities. The first 8x8 envelope-function approximation calculation for a (110)-oriented structure shows the bands to be slightly anisotropic and the oscillator strengths to be polarization dependent. Layer widths for specific absorption thresholds were calculated.

Citation Download Citation

F. Szmulowicz, H. J. Haugan, and G. J. Brown "Proposal for (110) InAs/GaSb superlattices for infrared detection", Proc. SPIE 6900, Quantum Sensing and Nanophotonic Devices V, 69000L (1 February 2008); https://doi.org/10.1117/12.763738

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