On-chip integration of InGaAs/GaAs quantum dot lasers with waveguides and modulators on silicon

Jun Yang; Pallab Bhattacharya; Guoxuan Qin; Zhenqiang Ma

doi:10.1117/12.765889

5 February 2008 On-chip integration of InGaAs/GaAs quantum dot lasers with waveguides and modulators on silicon

Jun Yang, Pallab Bhattacharya, Guoxuan Qin, Zhenqiang Ma

Proceedings Volume 6909, Novel In-Plane Semiconductor Lasers VII; 69090N (2008) https://doi.org/10.1117/12.765889
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

Compound-semiconductor-based photonic devices, including lasers and modulators, directly grown and on-chip integrated on Si substrates provide a promising approach for the realization of optical interconnects with CMOS compatibility. Utilizing quantum dots as efficient dislocation filters near the GaAs-Si interface, for the first time, we demonstrated high-performance InGaAs/GaAs quantum dot (QD) lasers on silicon with a relatively low threshold current (J_th= 900 A/cm²), large small-signal modulation bandwidth of 5.5 GHz, and a high characteristic temperature (T₀ = 278 K). The integrated InGaAs QD lasers with quantum well (QW) electroabsorption modulators, achieved through molecular beam epitaxy (MBE) growth and regrowth, exhibit a coupling coefficient greater than 20% and a modulation depth ~100% at 5 V reverse bias. We achieved the monolithic integration of amorphous and crystalline silicon waveguides with quantum dot lasers by using plasma-enhanced-chemical-vapor-deposition (PECVD) and membrane transfer, respectively. Finally, preliminary results on the integration of QD lasers with Si CMOS transistors are presented.

Citation Download Citation

Jun Yang, Pallab Bhattacharya, Guoxuan Qin, and Zhenqiang Ma "On-chip integration of InGaAs/GaAs quantum dot lasers with waveguides and modulators on silicon", Proc. SPIE 6909, Novel In-Plane Semiconductor Lasers VII, 69090N (5 February 2008); https://doi.org/10.1117/12.765889

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