Paper
14 February 2008 Secrets of GaN substrates properties for high luminousity of InGaN quantum wells
M. Leszczynski, I. Grzegory, M. Boćkowski, B. Łucznik, T. Suski, P. Perlin, R. Czernecki, G. Targowski, M. Sarzyński, M. Kryśko, P. Prystawko, G. Kamler, G. Nowak, S. Porowski
Author Affiliations +
Abstract
Violet and blue Laser diodes, as well as highly efficient high-power Light Emitting Diodes (including any UV emitters) can be constructed using low-dislocation-density freestanding GaN substrates, either produced as thick HVPE layers on foreign substrates, or using direct methods of crystallization as ammonothermal one or high pressure growth from the nitrogen solution in gallium. This paper shows some of the most most important issues concerning application of such substrates. The first issue is the choice of the substrate thickness influencing the accommodation of strain, cracking and bowing of the samples. In this point, a new way of prestressing the substrate by lateral patterning will be presented. The second issue is the surface preparation either by mechanical polishing and reactive ion etching, or mechano-chemical polishing, in particular, a distribution of defects revealed by chemical etching will be discussed. Finally, the problem of substrate misorientation influencing the further morphology and indium incorporation into InGaN quantum wells will be shown. For higher misorientation of the substrates, the incorporation of indium decreases , but at the same time, the fluctuations of indium increase giving blue-shifted, weaker and broader photoluminescence peaks.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Leszczynski, I. Grzegory, M. Boćkowski, B. Łucznik, T. Suski, P. Perlin, R. Czernecki, G. Targowski, M. Sarzyński, M. Kryśko, P. Prystawko, G. Kamler, G. Nowak, and S. Porowski "Secrets of GaN substrates properties for high luminousity of InGaN quantum wells", Proc. SPIE 6910, Light-Emitting Diodes: Research, Manufacturing, and Applications XII, 69100G (14 February 2008); https://doi.org/10.1117/12.755767
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Gallium nitride

Crystals

Indium

Indium gallium nitride

Polishing

Semiconducting wafers

Surface finishing

RELATED CONTENT

Large area bow free n+ GaN templates by HVPE for...
Proceedings of SPIE (March 08 2014)
Development of semipolar (11-22) LEDs on GaN templates
Proceedings of SPIE (March 08 2016)
Auger effect in nonpolar quantum wells
Proceedings of SPIE (February 27 2012)
Photoluminescence mapping as a tool to improve LED production
Proceedings of SPIE (February 03 2009)

Back to Top