Linewidth roughness and cross-sectional measurements of sub-50 nm structures with CD-SAXS and CD-SEM

Chengqing Wang; Kwang-Woo Choi; Ronald L. Jones; Christopher Soles; Eric K. Lin; Wen-li Wu; James S. Clarke; John S. Villarrubia; Benjamin Bunday

doi:10.1117/12.773558

24 March 2008 Linewidth roughness and cross-sectional measurements of sub-50 nm structures with CD-SAXS and CD-SEM

Chengqing Wang, Kwang-Woo Choi, Ronald L. Jones, Christopher Soles, Eric K. Lin, Wen-li Wu, James S. Clarke, John S. Villarrubia, Benjamin Bunday

Author Affiliations +

Proceedings Volume 6922, Metrology, Inspection, and Process Control for Microlithography XXII; 69221Z (2008) https://doi.org/10.1117/12.773558
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

Critical dimension small angle X-ray scattering (CD-SAXS) is a measurement platform that is capable of measuring the average cross section and sidewall roughness in patterns ranging from (10 to 500) nm in pitch with sub-nm precision. These capabilities are obtained by measuring and modeling the scattering intensities of a collimated X-ray beam with sub-nanometer wavelength from a periodic pattern, such as those found in optical scatterometry targets. In this work, we evaluated the capability a synchrotron-based CD-SAXS measurements to characterize linewidth roughness (LWR) by measuring periodic line/space patterns fabricated with extreme ultraviolet (EUV) lithography with sub-50 nm linewidths and designed with programmed roughness amplitude and frequency. For these patterns, CD-SAXS can provide high precision data on cross-section dimensions, including sidewall angle, line height, line width, and pitch, as well as the LWR amplitude. We also discuss the status of ongoing efforts to compare quantitatively the CD-SAXS data with topdown critical dimension scanning electron microscopy (CD-SEM) measurements.

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Chengqing Wang, Kwang-Woo Choi, Ronald L. Jones, Christopher Soles, Eric K. Lin, Wen-li Wu, James S. Clarke, John S. Villarrubia, and Benjamin Bunday "Linewidth roughness and cross-sectional measurements of sub-50 nm structures with CD-SAXS and CD-SEM", Proc. SPIE 6922, Metrology, Inspection, and Process Control for Microlithography XXII, 69221Z (24 March 2008); https://doi.org/10.1117/12.773558

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