Exploring the limitations of x-ray reflectivity as a critical dimension pattern shape metrology

Hae-Jeong Lee; Sangcheol Kim; Christopher L. Soles; Eric K. Lin; Wen-Li Wu

doi:10.1117/12.772849

25 March 2008 Exploring the limitations of x-ray reflectivity as a critical dimension pattern shape metrology

Hae-Jeong Lee, Sangcheol Kim, Christopher L. Soles, Eric K. Lin, Wen-Li Wu

Proceedings Volume 6922, Metrology, Inspection, and Process Control for Microlithography XXII; 692224 (2008) https://doi.org/10.1117/12.772849
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

Specular X-ray reflectivity (SXR) can be used, in the limit of the effective medium approximation (EMA), as a highresolution shape metrology for periodic and irregular patterns on a smooth substrate. The EMA defines as that the density of the solid pattern and the space separating the patterns are averaged together. In this limit the density profile as a function of pattern height obtained by SXR can be used to extract quantitative information on the cross-sectional pattern profile. Here we explore the limitations of SXR as a pattern shape metrology by studying diblock copolymer films with irregularly shaped bicontinuous terraces on quantized flat layers alternating with two polymer blocks. We conclude that SXR can be extended to irregular shaped patterns encountered in current electronic devices as long as average lateral length scale is smaller than coherence length of X-ray source. The detailed cross-sectional profiles of irregular patterns are discussed along with atomic force microscope results.

Citation Download Citation

Hae-Jeong Lee, Sangcheol Kim, Christopher L. Soles, Eric K. Lin, and Wen-Li Wu "Exploring the limitations of x-ray reflectivity as a critical dimension pattern shape metrology", Proc. SPIE 6922, Metrology, Inspection, and Process Control for Microlithography XXII, 692224 (25 March 2008); https://doi.org/10.1117/12.772849

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KEYWORDS

Polymers

X-rays

Reflectivity

Metrology

Data modeling

Silicon

Picosecond phenomena

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