Advanced lithography parameters extraction by using scatterometry system: part II

Wenzhan Zhou; Michael Hsieh; Huipeng Koh; Meisheng Zhou

doi:10.1117/12.790826

16 April 2008 Advanced lithography parameters extraction by using scatterometry system: part II

Wenzhan Zhou, Michael Hsieh, Huipeng Koh, Meisheng Zhou

Proceedings Volume 6922, Metrology, Inspection, and Process Control for Microlithography XXII; 69223Y (2008) https://doi.org/10.1117/12.790826
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

As the advanced IC device process shrinks to below sub-micron dimensions (65nm, 45 nm and beyond), the overall CD error budget becomes more and more challenging. The impact of lithography process parameters other than exposure energy and defocus on final CD results cannot be ignored any more. In this paper we continue the development of the advanced lithography parameters model which we presented last year. This year we achieved to decouple 4 lithography parameters: exposure, focus, PEB temperature and laser bandwidth (or z-blur). To improve the accuracy and precision of the model, new scatterometry marks are designed to reduce the pitch dependent accuracy impact of sidewall angle and photoresist height for scatterometry metrology. The concept of this kind of scatterometry mark design is from T.A. Brunner's paper "Process Monitor Gating" [SPIE Vol. 6518, 2007]. With this concept, new scatterometry marks are designed to increase the accuracy of scatterometry measurement without sacrificing the process sensitivity and thus improve the model prediction accuracy.

Citation Download Citation

Wenzhan Zhou, Michael Hsieh, Huipeng Koh, and Meisheng Zhou "Advanced lithography parameters extraction by using scatterometry system: part II", Proc. SPIE 6922, Metrology, Inspection, and Process Control for Microlithography XXII, 69223Y (16 April 2008); https://doi.org/10.1117/12.790826

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