Monolithic Integration Of Si And GaAs Devices

H. K. Choi; G. W. Turner; T. H. Windhorn; B-Y. Tsaur

doi:10.1117/12.965201

17 February 1987 Monolithic Integration Of Si And GaAs Devices

H. K. Choi, G. W. Turner, T. H. Windhorn, B-Y. Tsaur

Proceedings Volume 0703, Integration and Packaging of Optoelectronic Devices; (1987) https://doi.org/10.1117/12.965201
Event: Cambridge Symposium-Fiber/LASE '86, 1986, Cambridge, MA, United States

Abstract

Integration of Si MOSFETs with GaAs MESFETs and with GaAs/AlGaAs double-heterostructure LEDs on mono-lithic GaAs/Si substrates is reviewed. Both Si MOSFETs and GaAs MESFETs show characteristics comparable to those for devices fabricated on separate Si and GaAs substrates. In LED/MOSFET integration, the cathode of each LED is connected with the drain of a MOSFET. LED modulation rates up to 27 Mbps have been achieved by applying a stream of voltage pulses to the MOSFET gate.

Citation Download Citation

H. K. Choi, G. W. Turner, T. H. Windhorn, and B-Y. Tsaur "Monolithic Integration Of Si And GaAs Devices", Proc. SPIE 0703, Integration and Packaging of Optoelectronic Devices, (17 February 1987); https://doi.org/10.1117/12.965201

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