Paper
17 February 1987 Monolithic Integration Of Si And GaAs Devices
H. K. Choi, G. W. Turner, T. H. Windhorn, B-Y. Tsaur
Author Affiliations +
Proceedings Volume 0703, Integration and Packaging of Optoelectronic Devices; (1987) https://doi.org/10.1117/12.965201
Event: Cambridge Symposium-Fiber/LASE '86, 1986, Cambridge, MA, United States
Abstract
Integration of Si MOSFETs with GaAs MESFETs and with GaAs/AlGaAs double-heterostructure LEDs on mono-lithic GaAs/Si substrates is reviewed. Both Si MOSFETs and GaAs MESFETs show characteristics comparable to those for devices fabricated on separate Si and GaAs substrates. In LED/MOSFET integration, the cathode of each LED is connected with the drain of a MOSFET. LED modulation rates up to 27 Mbps have been achieved by applying a stream of voltage pulses to the MOSFET gate.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. K. Choi, G. W. Turner, T. H. Windhorn, and B-Y. Tsaur "Monolithic Integration Of Si And GaAs Devices", Proc. SPIE 0703, Integration and Packaging of Optoelectronic Devices, (17 February 1987); https://doi.org/10.1117/12.965201
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KEYWORDS
Gallium arsenide

Silicon

Field effect transistors

Light emitting diodes

Magnesium

Semiconducting wafers

Modulation

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