Suppressing premature edge breakdown for InP/InGaAs avalanche photodiodes by modeling analyses

Y. G. Xiao; Z. Q. Li; Z. M. Simon Li

doi:10.1117/12.795549

3 September 2008 Suppressing premature edge breakdown for InP/InGaAs avalanche photodiodes by modeling analyses

Y. G. Xiao, Z. Q. Li, Z. M. Simon Li

Proceedings Volume 7055, Infrared Systems and Photoelectronic Technology III; 70550Y (2008) https://doi.org/10.1117/12.795549
Event: Photonic Devices + Applications, 2008, San Diego, California, United States

Abstract

In this work, based on the advanced drift and diffusion model with commercial software, the Crosslight APSYS, twodimensional photoresponsivity behavior for the InP/InGaAs separate absorption, grading, charge and multiplication avalanche photodiodes have been modeled to analyze suppressing premature edge breakdown. Basic physical quantities like band diagram, photon absorption, carrier generation and electric field as well as performance characteristics such as photocurrent, multiplication gain, and breakdown voltage etc., are obtained and selectively presented. Modeling results indicate that an etched mesa structure with the charge sheet layer can effectively suppress the premature edge breakdown in the device periphery region. Optimization modeling results with mesa step height are also demonstrated. Approach to model complex guard ring structure with double diffusion is further explored. Possible combination of Crosslight CSuprem diffusion profile is also discussed.

Citation Download Citation

Y. G. Xiao, Z. Q. Li, and Z. M. Simon Li "Suppressing premature edge breakdown for InP/InGaAs avalanche photodiodes by modeling analyses", Proc. SPIE 7055, Infrared Systems and Photoelectronic Technology III, 70550Y (3 September 2008); https://doi.org/10.1117/12.795549

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