High performance blue light-emitting diodes on patterned Si substrate

Zhanguo Li; Guojun Liu; Minghui You; Lin Li; Mei Li; Baoshun Zhang; Xiaohua Wang

doi:10.1117/12.804061

18 November 2008 High performance blue light-emitting diodes on patterned Si substrate

Zhanguo Li, Guojun Liu, Minghui You, Lin Li, Mei Li, Baoshun Zhang, Xiaohua Wang

Proceedings Volume 7135, Optoelectronic Materials and Devices III; 713544 (2008) https://doi.org/10.1117/12.804061
Event: Asia-Pacific Optical Communications, 2008, Hangzhou, China

Abstract

High quality crack-free GaN layers were successfully grown and the InGaN/GaN based blue LEDs fabricated on patterned Si (111) substrates. In addition to using the patterned growth technique, thin AlN and SiNx interlayers grown at high temperatures were also employed to partially release the residual stress and to further improve the crystalline quality. 300 µm square blue LEDs fabricated on the islands, without thinning and package, exhibited a high output power of around 0.68 mW at a drive current of 20 mA.

Citation Download Citation

Zhanguo Li, Guojun Liu, Minghui You, Lin Li, Mei Li, Baoshun Zhang, and Xiaohua Wang "High performance blue light-emitting diodes on patterned Si substrate", Proc. SPIE 7135, Optoelectronic Materials and Devices III, 713544 (18 November 2008); https://doi.org/10.1117/12.804061

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