Towards 100 nm Band NIR SLDs

Yu O. Kostin; P. I. Lapin; V. V. Prokhorov; V. R. Shidlovsky; S. D. Yakubovich

doi:10.1117/12.811864

30 December 2008 Towards 100 nm Band NIR SLDs

Yu O. Kostin, P. I. Lapin, V. V. Prokhorov, V. R. Shidlovsky, S. D. Yakubovich

Proceedings Volume 7139, 1st Canterbury Workshop on Optical Coherence Tomography and Adaptive Optics; 713905 (2008) https://doi.org/10.1117/12.811864
Event: 1st Canterbury Workshop and School in Optical Coherence Tomography and Adaptive Optics, 2008, Canterbury, United Kingdom

Abstract

The results of recent studies of superluminescent diodes (SLDs) based on new quantum-well (QW) (GaAl)As and (InGa)As heterostructures of spectral range 800 - 900 nm with spectral bandwidths of up to 80 nm and output power ex SM fiber of up to 50 mW are presented.

Citation Download Citation

Yu O. Kostin, P. I. Lapin, V. V. Prokhorov, V. R. Shidlovsky, and S. D. Yakubovich "Towards 100 nm Band NIR SLDs", Proc. SPIE 7139, 1st Canterbury Workshop on Optical Coherence Tomography and Adaptive Optics, 713905 (30 December 2008); https://doi.org/10.1117/12.811864

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