Paper
1 December 2008 Optimizing integrated optical CD monitoring by floating pre-process variations in a complex multi-layer structure
Marlene Strobl, Lisa Huang, Allen Li, Ying Luo, Youxian Wen
Author Affiliations +
Proceedings Volume 7140, Lithography Asia 2008; 71400G (2008) https://doi.org/10.1117/12.804636
Event: SPIE Lithography Asia - Taiwan, 2008, Taipei, Taiwan
Abstract
Historically, in a volume production environment, process induced variation in optical property (n&k) of film stack was not significant for the most of applications using scatterometry. Many papers presented before addressed the CD variation in the production by adopting the fixed optical property approach [1-8]. However, with shrinkage of device size, and introduction of new material and process, n&k variation of some critical layers can not be ignored. In this paper, it presents impacts on measured optical CD due to n&k variation of one critical film in a 70nm DRAM ArF lithography process at a patterned area (A-layer). A solution to minimize the impacts using floating n&k in the scatterometry model is discussed, developed and verified.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Marlene Strobl, Lisa Huang, Allen Li, Ying Luo, and Youxian Wen "Optimizing integrated optical CD monitoring by floating pre-process variations in a complex multi-layer structure", Proc. SPIE 7140, Lithography Asia 2008, 71400G (1 December 2008); https://doi.org/10.1117/12.804636
Lens.org Logo
CITATIONS
Cited by 3 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Semiconducting wafers

Critical dimension metrology

Data modeling

Mathematical modeling

Metrology

Scatterometry

Thin films

Back to Top