Paper
4 December 2008 Development of photosensitive silsesquioxane
Yuji Tashiro, Takeshi Sekito, Takafumi Iwata, Daishi Yokoyama, Toshiaki Nonaka
Author Affiliations +
Proceedings Volume 7140, Lithography Asia 2008; 71402O (2008) https://doi.org/10.1117/12.804669
Event: SPIE Lithography Asia - Taiwan, 2008, Taipei, Taiwan
Abstract
We succeeded in development of SOG materials comprised of cage-type phenyl silsesquioxanes (PSQ) and their alkali soluble derivatives. The alkali soluble silsesquioxane (APSQ) can provide both positive and negative tone photosensitive SOG combination with diazo naphtoquinone (DNQ) and photo-base (acid) agent, respectively. Here we present feature of photolithography process and film properties for our SOG materials.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuji Tashiro, Takeshi Sekito, Takafumi Iwata, Daishi Yokoyama, and Toshiaki Nonaka "Development of photosensitive silsesquioxane", Proc. SPIE 7140, Lithography Asia 2008, 71402O (4 December 2008); https://doi.org/10.1117/12.804669
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Cited by 1 scholarly publication.
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KEYWORDS
Silicon

Dielectrics

Transparency

Optical lithography

Polymers

Thermography

Transmittance

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